DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets
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